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Hultquist IP Materials Science Patents print this page

  • U.S. Patent 10,017,393
  • 7/10/18
  • Method Of Fabricating Array Of Nanoparticle Clusters Using Thermal Transformation Of Sublimable Liquid Crystal Film
  • U.S. Patent 9,861,945
  • 1/9/18
  • Ultrahigh Efficiency Spray Drying Apparatus And Process
  • U.S. Patent 9,861,588
  • 1/9/18
  • Nanoparticulate Systems Prepared From Sorbitan Esters
  • U.S. Patent 9,718,298
  • 8/1/17
  • Use Of Luminescent Nanosystems For Authenticating Security Documents
  • U.S. Patent 9,709,826
  • 7/18/17
  • An Ocular Lens
  • U.S. Patent 9,703,165
  • 7/11/17
  • Completely Solid Electrochromic Device, Electrochromic Bilayer For Said Device, And Method For Producing Said Device
  • U.S. Patent 9,698,313
  • 7/4/17
  • Solid State White Light Emitter And Display Using Same
  • U.S. Patent 9,691,617
  • 6/27/17
  • IIIA-VA Group Semiconductor Single Crystal Substrate And Method For Preparing Same
  • U.S. Patent 9,551,468
  • 1/24/17
  • Inverse Visible Spectrum Light And Broad Spectrum Light Source For Enhanced Vision
  • U.S. Patent 9,404,106
  • 8/2/16
  • Device Comprising A Composite Material And Having Nanotubes That Are Subjected To An Electric Field, And Uses Thereof
  • U.S. Patent 9,034,668
  • 5/21/15
  • Device And Process For Forming, On A Nanowire Made Of A Semiconductor, An Alloy Of This Semiconductor With A Metal Or Metalloid
  • U.S. Patent 9,012,876
  • 4/21/15
  • Germanium Antimony Telluride Materials And Devices Incorporating Same
  • U.S. Patent 8,378,463
  • 2/19/13
  • Orientation of Electronic Devices on Mis-cut Substrates
  • U.S. Patent 8,067,341
  • 11/29/2011
  • Method for Fabricating A Biochip Using the High Density Carbon Nanotube Film or Pattern
  • U.S. Patent 8,052,903
  • 11/8/2011
  • Vitreous Carbon Material and Process for Making the Same
  • U.S. Patent 7,972,711
  • 7/5/2011
  • Large Area, Uniformly Low Dislocation Density GaN Substrate And Process for Making the Same
  • U.S. Patent 7,943,945
  • 5/17/2011
  • Solid State White Light Emitter and Display Using Same
  • U.S. Patent 7,919,791
  • 4/5/2011
  • Doped Group III-V Nitride Materials, and Microelectronic Devices and Device Precursor Structures Comprising Same
  • U.S. Patent 7,915,152
  • 3/29/2011
  • III-V Nitride Substrate Boule and Method of Making and Using the Same
  • U.S. Patent 7,884,447
  • 2/8/2011
  • Laser Diode Orientation on Mis-Cut Substrates
  • U.S. Patent 7,879,147
  • 2/1/2011
  • Large Area, Uniformly Low Dislocation Density GaN Substrate and Process for Making the Same
  • U.S. Patent 7,862,897
  • 1/4/2011
  • Biphasic Nanoporous Vitreous Carbon Material and Method of Making the Same
  • U.S. Patent 7,700,203
  • 4/20/2010
  • Vicinal Gallium Niride Substrate for High Quality Homoepitaxy
  • U.S. Patent 7,682,944
  • 3/23/2010
  • Pendeo Epitaxial Structures and Devices
  • U.S. Patent 7,655,197
  • 2/2/2010
  • III-V Nitride Substrate Boule and Method of Making and Using the Same
  • U.S. Patent 7,390,581
  • 6/24/2008
  • Vicinal Gallium Nitride Substrate for High Quality Homoepitaxy
  • U.S. Patent 7,170,095
  • 1/30/2007
  • Semi-Insulating Gan and Method of Making the Same
  • U.S. Patent 6,800,218
  • 10/5/2004
  • Abrasive Free Formulations for Chemical Mechanical Polishing of Copper and Associated Materials and Methods of Using Same
  • U.S. Patent 6,787,186
  • 9/7/2004
  • Method of Controlled Chemical Vapor Deposition of a Metal Oxide Ceramic Layer
  • U.S. Patent 6,765,240
  • 7/20/2004
  • Bulk Single Crystal Gallium Nitride and Method of Making Same
  • U.S. Patent 6,680,489
  • 1/20/2004
  • Amorphous Silicon Carbide Thin Film Coating
  • U.S. Patent 6,678,347
  • 1/13/2004
  • Method and Apparatus for Quantitative Phase Analysis of Textured Polycrystalline Materials
  • U.S. Patent 6,599,447
  • 7/29/2003
  • Zirconium-Doped BST Materials and MOCVD Process Forming Same
  • U.S. Patent 6,596,079
  • 7/22/2003
  • III-V Nitride Substrate Boule and Method of Making and Using the Same
  • U.S. Patent 6,533,874
  • 3/18/2003
  • GaN-Based Devices Using Thick (Ga, Al, In) Base Layers
  • U.S. Patent 6,447,604
  • 9/10/2002
  • Method For Achieving Improved Epitaxy Quality (Surface Texture And Defect Density) On Free-Standing (Aluminum, Indium, Gallium) Nitride ((Al,In,Ga)N) Substrates For Opto-Electronic And Electronic Devices
  • U.S. Patent 6,440,823
  • 8/27/2002
  • Low Defect Density (Ga, Al, In)N and Hvpe Process For Making Same
  • U.S. Patent 6,355,562
  • 3/12/2002
  • Adhesion Promotion Method for CVD Copper Metallization in IC Applications
  • U.S. Patent 6,350,643
  • 2/26/2002
  • Reduced Degradation of Metal Oxide Ceramic Due To Diffusion of A Mobile Specie Therefrom
  • U.S. Patent 6,346,741
  • 2/12/2002
  • Compositions and Structures for Chemical Mechanical Polishing Of Feram Capacitors And Method Of Fabricating Feram Capacitors Using Same
  • U.S. Patent 6,329,088
  • 12/11/2001
  • Silicon Carbide Epitaxial Layers Grown on Substrates Offcut Towards
  • U.S. Patent 5,874,747
  • 2/23/1999
  • High Brightness Electroluminescent Device Emitting in the Green to Ultraviolet Spectrum, and Method of Making the Same
  • U.S. Patent 5,848,122
  • 12/8/1998
  • Apparatus for Rapid In-Situ X-Ray Stress Measurement During Thermal Cycling of Semiconductor Wafers
  • U.S. Patent 5,679,152
  • 10/21/1997
  • Method of Making a Single Crystal GaN Article
  • U.S. Patent 5,661,074
  • 8/26/1997
  • High Brightness Electroluminescent Device Emitting in the Green to Ultraviolet Spectrum, and Method of Making the Same
  • U.S. Patent 5,543,187
  • 8/6/1996
  • Amorphous Metal-Ceramic Composite Material
  • U.S. Patent 5,182,166
  • 1/26/1993
  • Wear-Resistant Composite Structure of Vitreous Carbon Containing Convoluted Fibers
  • U.S. Patent 5,168,540
  • 12/1/1992
  • Scintillating Articles and Method of Making the Same
  • U.S. Patent 5,132,278
  • 7/21/1992
  • Superconducting Composite Article, and Method of Making the Same
  • U.S. Patent 5,122,509
  • 6/16/1992
  • High Temperature Superconducting/Diamond Composite Article, and Method of Making the Same